Growth of InGaN and GaN films by photo-assisted metalorganic chemical vapor deposition
Identifieur interne : 013160 ( Main/Repository ); précédent : 013159; suivant : 013161Growth of InGaN and GaN films by photo-assisted metalorganic chemical vapor deposition
Auteurs : RBID : Pascal:00-0422980Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Nitride semiconductors are of interest for blue light-emitting devices. Because of the large difference in vapor pressures between indium and nitrogen, the growth of InGaN by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) has been problematic. We used triethylgallium (TEGa), trimethylindium (TMIn), and ammonia (NH3) as precursors of gallium, indium and nitrogen, respectively, for the growth of InxGa1 - xN (x = 0, 1, and 0.2) films on sapphire substrate by photo-assisted MOCVD. GaN and InGaN growth was achieved at substrate temperatures of 650°C and 700°C, respectively. The structure of the films was characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM).
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 012675
Links to Exploration step
Pascal:00-0422980Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Growth of InGaN and GaN films by photo-assisted metalorganic chemical vapor deposition</title><author><name sortKey="Tomar, M S" uniqKey="Tomar M">M. S. Tomar</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, University of Puerto Rico</s1><s2>Mayaguez, PR 00681-9016</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Mayaguez, PR 00681-9016</wicri:noRegion></affiliation></author><author><name sortKey="Rutherford, R" uniqKey="Rutherford R">R. Rutherford</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Engineering Physics Department, University of Tulsa</s1><s2>OK 74104</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Oklahoma</region></placeName></affiliation></author><author><name sortKey="New, C" uniqKey="New C">C. New</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Engineering Physics Department, University of Tulsa</s1><s2>OK 74104</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Oklahoma</region></placeName></affiliation></author><author><name sortKey="Kuenhold, K A" uniqKey="Kuenhold K">K. A. Kuenhold</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Engineering Physics Department, University of Tulsa</s1><s2>OK 74104</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Oklahoma</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0422980</idno><date when="2000">2000</date><idno type="stanalyst">PASCAL 00-0422980 INIST</idno><idno type="RBID">Pascal:00-0422980</idno><idno type="wicri:Area/Main/Corpus">012675</idno><idno type="wicri:Area/Main/Repository">013160</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CVD</term><term>Growth mechanism</term><term>III-V semiconductors</term><term>Nitrides</term><term>Organometallic compounds</term><term>Precursor</term><term>Raman spectra</term><term>SEM</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt chimique phase vapeur</term><term>Composé organométallique</term><term>Précurseur</term><term>Mécanisme croissance</term><term>Diffraction RX</term><term>Spectre Raman</term><term>SEM</term><term>Semiconducteur III-V</term><term>Nitrure</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Nitride semiconductors are of interest for blue light-emitting devices. Because of the large difference in vapor pressures between indium and nitrogen, the growth of InGaN by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) has been problematic. We used triethylgallium (TEGa), trimethylindium (TMIn), and ammonia (NH<sub>3</sub>) as precursors of gallium, indium and nitrogen, respectively, for the growth of In<sub>x</sub>Ga<sub>1 - x</sub>N (x = 0, 1, and 0.2) films on sapphire substrate by photo-assisted MOCVD. GaN and InGaN growth was achieved at substrate temperatures of 650°C and 700°C, respectively. The structure of the films was characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>63</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Growth of InGaN and GaN films by photo-assisted metalorganic chemical vapor deposition</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>CANCUN'99</s1></fA09><fA11 i1="01" i2="1"><s1>TOMAR (M. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>RUTHERFORD (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>NEW (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>KUENHOLD (K. A.)</s1></fA11><fA12 i1="01" i2="1"><s1>SEBASTIAN (P. J.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Physics Department, University of Puerto Rico</s1><s2>Mayaguez, PR 00681-9016</s2><s3>USA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Engineering Physics Department, University of Tulsa</s1><s2>OK 74104</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>Solar Hydrogen, Energy Research Center - UNAM</s1><s2>62508 Temixco, Morelos</s2><s3>MEX</s3><sZ>1 aut.</sZ></fA15><fA20><s1>437-443</s1></fA20><fA21><s1>2000</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000091223760130</s5></fA43><fA44><s0>0000</s0><s1>© 2000 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>7 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>00-0422980</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Nitride semiconductors are of interest for blue light-emitting devices. Because of the large difference in vapor pressures between indium and nitrogen, the growth of InGaN by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) has been problematic. We used triethylgallium (TEGa), trimethylindium (TMIn), and ammonia (NH<sub>3</sub>) as precursors of gallium, indium and nitrogen, respectively, for the growth of In<sub>x</sub>Ga<sub>1 - x</sub>N (x = 0, 1, and 0.2) films on sapphire substrate by photo-assisted MOCVD. GaN and InGaN growth was achieved at substrate temperatures of 650°C and 700°C, respectively. The structure of the films was characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM).</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Dépôt chimique phase vapeur</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>CVD</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Composé organométallique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Organometallic compounds</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Précurseur</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Precursor</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>XRD</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Spectre Raman</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Raman spectra</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>SEM</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>SEM</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>14</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>14</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Nitrure</s0><s2>NA</s2><s5>15</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Nitrides</s0><s2>NA</s2><s5>15</s5></fC03><fN21><s1>283</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 013160 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 013160 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:00-0422980
|texte= Growth of InGaN and GaN films by photo-assisted metalorganic chemical vapor deposition
}}
| This area was generated with Dilib version V0.5.77. |  |